ZXMP10A13FQ Specs and Replacement
Type Designator: ZXMP10A13FQ
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.806 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ -
Output Capacitance: 13.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
ZXMP10A13FQ datasheet
..1. Size:473K diodes
zxmp10a13fq.pdf 
ZXMP10A13FQ 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed Max ID BVDSS Max RDS(ON) Low Input Capacitance TA = +25 C Low Gate Charge 1.0 @ VGS= -10V -0.7A Low Threshold -100V 1.45 @ VGS= -6.0V -0.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. ... See More ⇒
4.1. Size:159K diodes
zxmp10a13fta.pdf
A Product Line of Diodes Incorporated ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Fast Switching Speed Max ID BVDSS Max RDS(ON) Package TA = +25 C Low Input Capacitance Note 5 Low Gate Charge Low Threshold 1.0 @ VGS= -10V -0.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -100V SOT23 Halogen and Antim... See More ⇒
4.2. Size:210K diodes
zxmp10a13f.pdf
ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 Low on-resista... See More ⇒
6.1. Size:823K diodes
zxmp10a18k.pdf
ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on... See More ⇒
6.2. Size:277K diodes
zxmp10a18g.pdf
ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = - 100V RDS(on) = 0.150 ; ID = - 3.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT223 Low on-r... See More ⇒
6.3. Size:757K diodes
zxmp10a16k.pdf
ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.235 @ VGS= -10V 4.6 -100 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-... See More ⇒
6.4. Size:699K diodes
zxmp10a17e6 zxmp10a17e6ta.pdf
A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1... See More ⇒
6.5. Size:636K diodes
zxmp10a17g.pdf
A Product Line of Diodes Incorporated ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10... See More ⇒
6.6. Size:608K diodes
zxmp10a18gta.pdf
A Product Line of Diodes Incorporated ZXMP10A18G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance ID max Fast switching speed V(BR)DSS RDS(on) max TA = 25 C Green component. Lead Free Finish / RoHS compliant (Notes 3) (Note 1) 150m @ VGS = -10V -3.7A Qualified to AEC-Q101 Standards for High Reliability ... See More ⇒
6.7. Size:639K diodes
zxmp10a17e6q.pdf
ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) ... See More ⇒
6.8. Size:678K diodes
zxmp10a17k.pdf
A Product Line of Diodes Incorporated ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -3.9A Qualified to AEC-Q101 Standards for High Reliability -1... See More ⇒
6.9. Size:600K diodes
zxmp10a17e6.pdf
ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q... See More ⇒
6.10. Size:820K zetex
zxmp10a18ktc.pdf
ZXMP10A18K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.150 @ VGS= -10V -5.9 -100 0.190 @ VGS= -6V -5.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on... See More ⇒
6.11. Size:753K zetex
zxmp10a16ktc.pdf
ZXMP10A16K 100V DPAK P-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.235 @ VGS= -10V 4.6 -100 0.285 @ VGS= -6V 4.2 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast G switching, making it ideal for high efficiency power management applications. Features S Low on-... See More ⇒
6.12. Size:904K cn vbsemi
zxmp10a18k.pdf
ZXMP10A18K www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET - 100 11.7 0.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-251 Power Swit... See More ⇒
6.13. Size:762K cn vbsemi
zxmp10a17gta.pdf
ZXMP10A17GTA www.VBsemi.tw P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100% Rg and UIS Tested 0.200 at VGS = - 10 V - 3.0 - 100 13.2 nC 0.230 at VGS = - 6 V - 2.4 APPLICATIONS Available Active Clamp in Intermediate DC/ DC Power Supplies S H-Bridge High Side Switch for Lighting Applicatio... See More ⇒
Detailed specifications: DMTH6005LK3Q, DMTH6009LK3, DMTH6009LK3Q, DMTH6010LK3, DMTH6010LPSQ, DMTH6016LSD, DMTH8003SPS, DMTH8012LPSW, 8N60, ZXMS6005DGQ-13, 19N20, DMG10N60SCT, DMG3N60SJ3, DMG4N60SCT, DMG4N60SJ3, DMG4N60SK3, DMG7N65SCT
Keywords - ZXMP10A13FQ MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
