DMJ70H601SK3 Specs and Replacement
Type Designator: DMJ70H601SK3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 267 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
DMJ70H601SK3 substitution
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DMJ70H601SK3 datasheet
dmj70h601sk3.pdf
NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A... See More ⇒
dmj70h601sk3.pdf
isc N-Channel MOSFET Transistor DMJ70H601SK3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
dmj70h601sv3.pdf
isc N-Channel MOSFET Transistor DMJ70H601SV3 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒
Detailed specifications: DMG7N65SCTI, DMG7N65SJ3, DMG8N65SCT, DMJ70H1D0SV3, DMJ70H1D3SH3, DMJ70H1D4SV3, DMJ70H1D5SV3, DMJ70H600SH3, RU7088R, DMJ70H601SV3, DMJ70H900HJ3, DMN15H310SK3, DMN6017SK3, DMN60H3D5SK3, DMN60H4D5SK3, DMN80H2D0SCTI, DMN90H2D2HCTI
Keywords - DMJ70H601SK3 MOSFET specs
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