All MOSFET. DMJ70H601SV3 Datasheet

 

DMJ70H601SV3 Datasheet and Replacement


   Type Designator: DMJ70H601SV3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 267 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO251
 

 DMJ70H601SV3 substitution

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DMJ70H601SV3 Datasheet (PDF)

 ..1. Size:559K  diodes
 dmj70h601sv3.pdf pdf_icon

DMJ70H601SV3

NOT RECOMMENDED FOR NEW DESIGN NO ALTERNATIVE PART DMJ70H601SV3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID BVDSS RDS(ON) Max High BVDSS Rating for Power Application TC = +25C Low Input Capacitance 700V 0.6 @ VGS = 10V 8A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

 ..2. Size:274K  inchange semiconductor
 dmj70h601sv3.pdf pdf_icon

DMJ70H601SV3

isc N-Channel MOSFET Transistor DMJ70H601SV3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:452K  diodes
 dmj70h601sk3.pdf pdf_icon

DMJ70H601SV3

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMJ70H601SK3 700V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Input Resistance ID BVDSS RDS(ON) max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 700V 0.6 @ VGS = 10V 8A Halogen and Antimony Free. Green Device (Note 3) Description and A

 4.2. Size:266K  inchange semiconductor
 dmj70h601sk3.pdf pdf_icon

DMJ70H601SV3

isc N-Channel MOSFET Transistor DMJ70H601SK3FEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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Datasheet: DMG7N65SJ3 , DMG8N65SCT , DMJ70H1D0SV3 , DMJ70H1D3SH3 , DMJ70H1D4SV3 , DMJ70H1D5SV3 , DMJ70H600SH3 , DMJ70H601SK3 , MMIS60R580P , DMJ70H900HJ3 , DMN15H310SK3 , DMN6017SK3 , DMN60H3D5SK3 , DMN60H4D5SK3 , DMN80H2D0SCTI , DMN90H2D2HCTI , DMN90H8D5HCT .

History: SPC65R360G

Keywords - DMJ70H601SV3 MOSFET datasheet

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