All MOSFET. DMNH6011LK3 Datasheet

 

DMNH6011LK3 Datasheet and Replacement


   Type Designator: DMNH6011LK3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8.7 nS
   Cossⓘ - Output Capacitance: 331 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO252
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DMNH6011LK3 Datasheet (PDF)

 ..1. Size:590K  diodes
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DMNH6011LK3

GreenDMNH6011LK3 55V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 12m @ VGS = 10V 80A 100% Unclamped Inductive Switching Ensures more Reliable 55V 18m @ VGS = 4.5V 65A and Robust End Application Low On-Resistance

 ..2. Size:265K  inchange semiconductor
dmnh6011lk3.pdf pdf_icon

DMNH6011LK3

isc N-Channel MOSFET Transistor DMNH6011LK3FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 55V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:610K  diodes
dmnh6012lk3.pdf pdf_icon

DMNH6011LK3

Green DMNH6012LK3 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C - Ideal for High Ambient Temperature Environments ID max BVDSS RDS(ON) max 100% Unclamped Inductive Switching Ensures More Reliable TC = +25C 12m @ VGS = 10V 60A and Robust End Application 60V 50A 18m @ VGS = 4.5V Low On-Resistance L

 7.2. Size:265K  inchange semiconductor
dmnh6012lk3.pdf pdf_icon

DMNH6011LK3

isc N-Channel MOSFET Transistor DMNH6012LK3FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CS12N65FA9H | BRCS200P03DP | IRFB3004GPBF | IXTM10N60 | RF1S40N10 | LKK47-06C5 | TSM4424CS

Keywords - DMNH6011LK3 MOSFET datasheet

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