DMTH10H005LCT PDF and Equivalents Search

 

DMTH10H005LCT Specs and Replacement

Type Designator: DMTH10H005LCT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.9 nS

Cossⓘ - Output Capacitance: 1494 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220AB

DMTH10H005LCT substitution

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DMTH10H005LCT datasheet

 ..1. Size:414K  diodes
dmth10h005lct.pdf pdf_icon

DMTH10H005LCT

Green DMTH10H005LCT 100V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 Ideal for High Ambient Temperature C ID BVDSS RDS(ON) Environments TC = +25 C 100% Unclamped Inductive Switching Ensures More Reliable 100V 5m @VGS = 10V 140A and Robust End Application Low Input Capacitance Description High BVD... See More ⇒

 ..2. Size:260K  inchange semiconductor
dmth10h005lct.pdf pdf_icon

DMTH10H005LCT

isc N-Channel MOSFET Transistor DMTH10H005LCT FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general... See More ⇒

 4.1. Size:513K  diodes
dmth10h005sct.pdf pdf_icon

DMTH10H005LCT

Green DMTH10H005SCT 100V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 C Ideal for High Ambient Temperature BVDSS RDS(ON) TC = +25 C Environments 100V 5m @VGS = 10V 140A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description High BVDSS ... See More ⇒

 4.2. Size:260K  inchange semiconductor
dmth10h005sct.pdf pdf_icon

DMTH10H005LCT

isc N-Channel MOSFET Transistor DMTH10H005SCT FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general... See More ⇒

Detailed specifications: DMNH6021SK3, DMNH6042SK3, DMT10H010LCT, DMT4003SCT, DMT4005SCT, DMT6005LCT, DMT6009LCT, DMT6010SCT, 2N7000, DMTH10H005SCT, DMTH10H010LCT, DMTH10H010SCT, DMTH4005SCT, DMTH6004SCT, DMTH6004SCTB, DMTH6005LCT, DMTH6010SCT

Keywords - DMTH10H005LCT MOSFET specs

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