SSP5N90A Datasheet and Replacement
Type Designator: SSP5N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 54 nC
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 105 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
Package: TO220
SSP5N90A substitution
SSP5N90A Datasheet (PDF)
ssp5n90a.pdf

SSP5N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
ssp5n90a.pdf

Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 2.9 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
ssp5n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.754 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsS
Datasheet: SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A , SSP4N90AS , SSP5N80A , CEP83A3 , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , SSP70N10A , SSP7N60A , SSP7N80A .
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