All MOSFET. ET6303 Datasheet

 

ET6303 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ET6303
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: PDFN3333

 ET6303 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ET6303 Datasheet (PDF)

 ..1. Size:758K  eternal
et6303.pdf

ET6303
ET6303

Eternal Semiconductor Inc.ET6303P-Channel Enhancement-Mode MOSFET (-30V, -47A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.8.5 @ VGS = 10V, ID=20A-30V -47A15@ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2

 9.1. Size:688K  eternal
et6300.pdf

ET6303
ET6303

Eternal Semiconductor Inc.ET6300N-Channel Enhancement-Mode MOSFET (30V,45A)PRODUCT SUMMARYVDSS ID RDS(on) (m)Max7.9 @ VGS = 10V, ID=20A30V 45A 12 @ VGS = 4.5V, ID=10AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Fast Switching LeadPb-free and halogen-freePin 1 / 2 / 3:

 9.2. Size:457K  eternal
et6309.pdf

ET6303
ET6303

Eternal Semiconductor Inc.ET6309N-Channel Fast Switching MOSFET (30V, 100A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Max4 @ VGS = 10V, ID=30A 30V 100A6 @ VGS = 4.5V, ID=15AFeatures Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trenchtechnology 100% EAS Guaranteedtechnology LeadPb-free and halogen-freeTOP Marking E

 9.3. Size:960K  eternal
et6304.pdf

ET6303
ET6303

Eternal Semiconductor Inc.ET6304N-Channel High Density Trench MOSFET (30V, 64A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ. 4 @ VGS = 10V, ID=20A30V 645.7 @ VGS = 4.5V, ID=16AFeatures Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability LeadPb-free and halogen-freeTOP Marking ET6304 XXXXXX

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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