FIR10N65FG MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

FIR10N65FG Specs and Replacement

Type Designator: FIR10N65FG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.67 nS

Cossⓘ - Output Capacitance: 128 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

FIR10N65FG substitution

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FIR10N65FG datasheet

..1. Size:1909K first semi
fir10n65fg.pdf pdf_icon

FIR10N65FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Switchng Regulator Application Features High Voltage BVDSS=650V(Min.) Low Crss Crss=16pF(Typ.) G Low gate charge Qg=35nC(Typ.) D S Low RDS(on) RDS(on)=0.8 D G S Marking Diagram Y = Year A = Assembly Location YAWW WW = Work Week FIR10N65F FIR10N65F = Specific Device Code Absolu... See More ⇒

7.1. Size:2678K first semi
fir10n60fg.pdf pdf_icon

FIR10N60FG Silicon N-Channel Power MOSFET PIN Connection TO-220F VDSS 600 V ID 10 A PD (TC=25 ) 125 W RDS(ON) 0.63 Features G D S Fast Switching ESD Improved Capability D Low Gate Charge (Typical Data 60nC) Low Reverse transfer capacitances(Typical 28pF) G 100% Single Pulse avalanche energy Test S Applications Marking Diagram Power switch circuit of adap... See More ⇒

8.1. Size:4610K first semi
fir10n50fg.pdf pdf_icon

FIR10N50FG N - CHANNEL MOSFET-G PIN Connection TO-220F VDSS 500 V ID 10 A PD(TC=25 ) 40 W RDS(ON)Typ 0.5 General Description G D S , the silicon N-channel Enhanced FIR10N50FG VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor G can be... See More ⇒

8.2. Size:2398K first semi
fir10n70fg.pdf pdf_icon

FIR10N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 37nC (Typ.). BVDSS=700V,ID=10A G DS RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Locati... See More ⇒