FIR4N65LG Specs and Replacement
Type Designator: FIR4N65LG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 53 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO252
FIR4N65LG substitution
- MOSFET ⓘ Cross-Reference Search
FIR4N65LG datasheet
fir4n65lg.pdf
FIR4N65LG Advanced N-Ch Power MOSFET-H PIN Connection TO-252(D-PAK) General Description FIR4N65LG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology D which reduce the conduction loss, improve switching G performance and enhance the avalanche energy. The transistor S can be used in various power switching circuit for system miniaturiz... See More ⇒
fir4n65afg.pdf
FIR4N65AFG 650V N-Channel MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=13.7nC (Typ.). BVDSS=650V,ID=4A G D S RDS(on) 2.6 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assemb... See More ⇒
fir4n65bpg.pdf
FIR4N65BPG Advanced N-Ch Power MOSFET PIN Connection TO-251(I-PAK) General Description FIR4N65BPGis an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state 1 2 3 resistance, pro... See More ⇒
fir4n65fg.pdf
FIR4N65FG Advanced N-Ch Power MOSFET-H PIN Connection TO-220F General Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system g Schematic di... See More ⇒
Detailed specifications: FIR20N65AFG, FIR2N60ALG, FIR2N65ABPG, FIR4N60BPG, FIR4N60FG, FIR4N60LG, FIR4N65BPG, FIR4N65FG, IRF1405, FIR7N60FG, FIR7N65FG, AS3423B, 2N7002HW, 2N7002HT, 2N7002HL, BL2302, BL2305
Keywords - FIR4N65LG MOSFET specs
FIR4N65LG cross reference
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FIR4N65LG substitution
FIR4N65LG replacement
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History: R6007ENJ | ISA07N65A | CPC3720 | SI2309CDS | 1H10 | JMSH0602PC | AP75N07AGP
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