SSP6N90A MOSFET. Datasheet pdf. Equivalent
Type Designator: SSP6N90A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 160 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 68 nC
Drain-Source Capacitance (Cd): 1560 pF
Maximum Drain-Source On-State Resistance (Rds): 2.3 Ohm
Package: TO220
SSP6N90A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSP6N90A Datasheet (PDF)
1.1. ssp6n90a.pdf 
Size:863K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.829 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V
5.1. ssp6n70a.pdf Size:864K _samsung
Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V
5.2. ssp6n80a.pdf Size:863K _samsung
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1. ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara
Datasheet: SSP4N90A , SSP4N90AS , SSP5N80A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , APT50M38JFLL , SSP70N10A , SSP7N60A , SSP7N80A , SSP80N06A , SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A .
