All MOSFET. SMF16N65 Datasheet

 

SMF16N65 Datasheet and Replacement


   Type Designator: SMF16N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 99 nS
   Cossⓘ - Output Capacitance: 205 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220F
 

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SMF16N65 Datasheet (PDF)

 ..1. Size:521K  huake
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SMF16N65

SMF16N65650V N-Channnel MOSFETFeatures 16A, 650V, R =0.5@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: SMD2N65 , SMD4N65 , SMD7N65 , SMF10N60 , SMF10N65 , SMF12N60 , SMF12N65 , SMF14N65 , IRF540 , SMF20N65 , SMF2N60 , SMF2N65 , SMF4N60 , SMF4N65 , SMF5N60 , SMF5N65 , SMF7N60 .

History: NTMFS5C673NLT1G | MEE6240T

Keywords - SMF16N65 MOSFET datasheet

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