All MOSFET. SMF7N65 Datasheet

 

SMF7N65 Datasheet and Replacement


   Type Designator: SMF7N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220F
 

 SMF7N65 substitution

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SMF7N65 Datasheet (PDF)

 ..1. Size:885K  huake
 smf7n65.pdf pdf_icon

SMF7N65

SMF7N65650V N-Channnel MOSFETFeatures 7.0A, 650V, R =1.2@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 8.1. Size:866K  huake
 smf7n60.pdf pdf_icon

SMF7N65

SMF7N60600V N-Channnel MOSFETFeatures 7.0A, 600V, R =1.0@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

Datasheet: SMF20N65 , SMF2N60 , SMF2N65 , SMF4N60 , SMF4N65 , SMF5N60 , SMF5N65 , SMF7N60 , IRF630 , SMF8N60 , SMF8N65 , SMT10N60 , SMT12N60 , SMT5N60 , SMT8N60 , 1H05 , 1H10 .

Keywords - SMF7N65 MOSFET datasheet

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