SMT12N60 Datasheet and Replacement
Type Designator: SMT12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 182 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
SMT12N60 substitution
SMT12N60 Datasheet (PDF)
smt12n60.pdf

SMT12N60600V N-Channnel MOSFETFeatures 12.0A, 600V, R =0.63@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va
Datasheet: SMF4N65 , SMF5N60 , SMF5N65 , SMF7N60 , SMF7N65 , SMF8N60 , SMF8N65 , SMT10N60 , IRFB4115 , SMT5N60 , SMT8N60 , 1H05 , 1H10 , 5N04 , HA20N50 , HA20N60 , HA210N06 .
History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G
Keywords - SMT12N60 MOSFET datasheet
SMT12N60 cross reference
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History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G



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