SMT12N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: SMT12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 85 nS
Cossⓘ - Output Capacitance: 182 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
SMT12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMT12N60 Datasheet (PDF)
..1. Size:790K huake
smt12n60.pdf
smt12n60.pdf
SMT12N60600V N-Channnel MOSFETFeatures 12.0A, 600V, R =0.63@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Va
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