SSP7N80A Specs and Replacement
Type Designator: SSP7N80A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
Package: TO220
SSP7N80A substitution
- MOSFET ⓘ Cross-Reference Search
SSP7N80A datasheet
ssp7n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒
ssp7n60b sss7n60b.pdf
SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒
ssp7n60a.pdf
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
Detailed specifications: SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , SSP70N10A , SSP7N60A , IRF740 , SSP80N06A , SSR1N50 , SSR1N50A , SSR1N60A , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A .
Keywords - SSP7N80A MOSFET specs
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