All MOSFET. HU60N75 Datasheet

 

HU60N75 Datasheet and Replacement


   Type Designator: HU60N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO251
 

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HU60N75 Datasheet (PDF)

 ..1. Size:2721K  haolin elec
 hd60n75 hu60n75.pdf pdf_icon

HU60N75

Nov 2009BVDSS = 75VRDS(on) = 16 mHD60N75 / HU60N75ID = 60 A75V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N75 HU60N75 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 40 nC (Typ.) Exten

 9.1. Size:2558K  haolin elec
 hd60n03 hu60n03.pdf pdf_icon

HU60N75

Nov 2009BVDSS = 30 VRDS(on) = 0.014HD60N03 / HU60N03ID = 60 A30V N-Channel MOSFETTO-252 TO-251FEATURES Originative New DesignHD60N03 HU60N03 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 18.5 nC (Typ.) E

Datasheet: HD40N04 , HD50N06D , HU50N06D , HD5N50 , HU5N50 , HD60N03 , HU60N03 , HD60N75 , IRFB3607 , HD60P03 , HU60P03 , HD70N08 , HU70N08 , HD830 , HU830 , HD830U , HU830U .

History: SM1F01NF | HD60N03

Keywords - HU60N75 MOSFET datasheet

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