HU60N75 PDF and Equivalents Search

 

HU60N75 Specs and Replacement

Type Designator: HU60N75

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO251

HU60N75 substitution

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HU60N75 datasheet

 ..1. Size:2721K  haolin elec
 hd60n75 hu60n75.pdf pdf_icon

HU60N75

Nov 2009 BVDSS = 75V RDS(on) = 16 m HD60N75 / HU60N75 ID = 60 A 75V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD60N75 HU60N75 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 40 nC (Typ.) Exten... See More ⇒

 9.1. Size:2558K  haolin elec
 hd60n03 hu60n03.pdf pdf_icon

HU60N75

Nov 2009 BVDSS = 30 V RDS(on) = 0.014 HD60N03 / HU60N03 ID = 60 A 30V N-Channel MOSFET TO-252 TO-251 FEATURES Originative New Design HD60N03 HU60N03 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18.5 nC (Typ.) E... See More ⇒

Detailed specifications: HD40N04, HD50N06D, HU50N06D, HD5N50, HU5N50, HD60N03, HU60N03, HD60N75, IRFB3607, HD60P03, HU60P03, HD70N08, HU70N08, HD830, HU830, HD830U, HU830U

Keywords - HU60N75 MOSFET specs

 HU60N75 cross reference

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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