SSR1N60A Specs and Replacement
Type Designator: SSR1N60A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: DPAK
SSR1N60A substitution
- MOSFET ⓘ Cross-Reference Search
SSR1N60A datasheet
ssr1n60a.pdf
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 9.390 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact... See More ⇒
ssr1n60b ssr1n60btm ssu1n60b.pdf
November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to... See More ⇒
Detailed specifications: SSP6N80A , SSP6N90A , SSP70N10A , SSP7N60A , SSP7N80A , SSP80N06A , SSR1N50 , SSR1N50A , IRF540 , SSR2N60A , SSR3055A , SSR3055LA , SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A .
Keywords - SSR1N60A MOSFET specs
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