SSR1N60A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSR1N60A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 28
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 0.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 20
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12
Ohm
Package:
DPAK
SSR1N60A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSR1N60A
Datasheet (PDF)
..2. Size:502K samsung
ssr1n60a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 9.390 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charact
7.1. Size:678K fairchild semi
ssr1n60b ssr1n60btm ssu1n60b.pdf
November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to
9.3. Size:504K samsung
ssr1n50a.pdf
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char
Datasheet: SSP6N80A
, SSP6N90A
, SSP70N10A
, SSP7N60A
, SSP7N80A
, SSP80N06A
, SSR1N50
, SSR1N50A
, IRF540N
, SSR2N60A
, SSR3055A
, SSR3055LA
, SSS10N60A
, SSS1N50A
, SSS1N60A
, SSS2N60A
, SSS2N80A
.
