HP20N50 Datasheet and Replacement

HF20N50,HP20N50500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,Parameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 500 VContinu

SiHP20N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.184 Reduced switching and conduction lossesQg max. (nC) 92 Low gate charge (Qg)Qgs (nC) 10 Avalanche energy rated (UIS)Qgd (nC) 19 Mater

Philips Semiconductors Product specification N-channel TrenchMOS transistor PHP20NQ20T, PHB20NQ20T FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 20 AgRDS(ON) 130 msGENERAL DESCRIPTIONN-channel enhancement mode field-effect power transistor in a plasti

PHP20N06T; PHB20N06TN-channel TrenchMOS transistorRev. 01 22 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:PHP20N06T in SOT78 (TO-220AB)PHB20N06T in SOT404 (D 2-PAK).2. Features Very low on-state resistance Fast switching.3. Applications

Philips Semiconductors Product specification PowerMOS transistor PHP20N06E GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in a plasticenvelope. VDS Drain-source voltage 60 VThe device is intended for use in ID Drain current (DC) 22 ASwitched Mode Power Supplies Ptot Total power dissipation 75 W(SMPS), mo

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PHP20N06TN-channel TrenchMOS standard level FETRev. 02 27 November 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Fe

N N-CHANNEL MOSFET FHF20N65A/ FHP20N65A/FHA20N65A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 650V Fast switching Rdson-typ 0.35 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

N N-CHANNEL MOSFET FHF20N60A/ FHP20N60A/FHA20N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 20A Crss ( 20pF) Low Crss (typical 20pF ) VDSS 600V Fast switching Rdson-typ 0.32 @Vgs=10V 100% 100% avalanche tested P (T =25) 85W D C

N N-CHANNEL MOSFET FHP20N40A MAIN CHARACTERISTICS FEATURES ID 20A Low gate charge VDSS 400V Crss ( 12.3pF) Low Crss (typical 12.3pF ) Rdson-typ @Vgs=10V 0.23 Fast switching Qg-typ 42nC 100% 100% avalanche tested dv/dt Improved

HF20N60,HP20N60600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Absolute Maximum Ratings TC = 25 unless otherwise notedC,ValueParameter Symbol UnitTO-220TO-220F/ Drain-Source Voltage (VGS = 0V)