HF640 MOSFET Datasheet: N-Ch, 200V, 18A. Full specification with pinout and replacement list

HF640 Specs and Replacement

Type Designator: HF640

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220F

HF640 substitution

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HF640 datasheet

..1. Size:2923K haolin elec
hf640 hp640.pdf pdf_icon

HF640,HP640 200V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking HF640 TO-220F HF640 HP640 TO-220 HP640 Absolute Maximum Ratings TC = 25 C, unles... See More ⇒

0.1. Size:196K vishay
irf640lpbf irf640spbf sihf640l sihf640s.pdf pdf_icon

IRF640S, IRF640L, SiHF640S, SiHF640L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 200 Surface Mount RDS(on) ( )VGS = 10 V 0.18 Low-Profile Through-Hole Qg (Max.) (nC) 70 Available in Tape and Reel Qgs (nC) 13 Dynamic dV/dt Rating 150 C Operating Temperature Qgd (nC) 39 Fast Swi... See More ⇒

0.2. Size:197K vishay
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IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESC... See More ⇒

0.3. Size:209K vishay
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