All MOSFET. HY1403D Datasheet

 

HY1403D Datasheet and Replacement


   Type Designator: HY1403D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252
 

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HY1403D Datasheet (PDF)

 ..1. Size:1533K  hymexa
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HY1403D

HY1403D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 30V/42ARDS(ON) = 10 m(typ.) @VGS =- 10VRDS(ON) = 14 m(typ.) @VGS = -4.5VSSD SD S 100% Avalanche TestedG DG D GG Reliable and RuggedSSDD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Switching Application Power Man

Datasheet: HY1210U , HY1210V , HY12P03C2 , HY12P03S , HY1303C , HY1310D , HY1310U , HY1310V , IRF840 , HY1403U , HY1403V , HY1503C1 , HY1506C2 , HY15P03C2 , HY15P03S , HY1603D , HY1603U .

History: SIHFI9530G | EFC6612R-TF | PSMN1R7-40YLD | SIHFBC40AS | SVFP12N65CFJD | 2SK1512-01 | QM6004P

Keywords - HY1403D MOSFET datasheet

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