HY1403D MOSFET. Datasheet pdf. Equivalent
Type Designator: HY1403D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 42 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 251 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: TO252
HY1403D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY1403D Datasheet (PDF)
..1. Size:1533K hymexa
hy1403d hy1403u hy1403v.pdf
hy1403d hy1403u hy1403v.pdf
HY1403D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 30V/42ARDS(ON) = 10 m(typ.) @VGS =- 10VRDS(ON) = 14 m(typ.) @VGS = -4.5VSSD SD S 100% Avalanche TestedG DG D GG Reliable and RuggedSSDD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Switching Application Power Man
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