All MOSFET. HY1403D Datasheet

 

HY1403D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1403D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 251 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252

 HY1403D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1403D Datasheet (PDF)

 ..1. Size:1533K  hymexa
hy1403d hy1403u hy1403v.pdf

HY1403D
HY1403D

HY1403D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 30V/42ARDS(ON) = 10 m(typ.) @VGS =- 10VRDS(ON) = 14 m(typ.) @VGS = -4.5VSSD SD S 100% Avalanche TestedG DG D GG Reliable and RuggedSSDD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3SApplications Switching Application Power Man

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top