HY1403U Datasheet. Specs and Replacement
Type Designator: HY1403U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 42 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 251 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO251
HY1403U substitution
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HY1403U datasheet
hy1403d hy1403u hy1403v.pdf
HY1403D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 30V/42A RDS(ON) = 10 m (typ.) @VGS =- 10V RDS(ON) = 14 m (typ.) @VGS = -4.5V S S D S D S 100% Avalanche Tested G D G D G G Reliable and Rugged S S D D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Man... See More ⇒
Detailed specifications: HY1210V, HY12P03C2, HY12P03S, HY1303C, HY1310D, HY1310U, HY1310V, HY1403D, 20N60, HY1403V, HY1503C1, HY1506C2, HY15P03C2, HY15P03S, HY1603D, HY1603U, HY1603S
Keywords - HY1403U MOSFET specs
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