All MOSFET. HY1607V Datasheet

 

HY1607V MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY1607V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 351 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO251

 HY1607V Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY1607V Datasheet (PDF)

 ..1. Size:1089K  hymexa
 hy1607d hy1607u hy1607v.pdf

HY1607V HY1607V

HY1607D/U/VN-Channel Enhancement Mode MOSFETFeaturesPin Description 68V/70ARDS(ON)= 6.8m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SDG Lead Free and Green Devices AvailableSD(RoHS Compliant)GTO-252-2L TO-251-3LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marking InformationPackage Cod

 8.1. Size:2351K  hymexa
 hy1607p hy1607m hy1607b hy1607mf hy1607ps hy1607pm.pdf

HY1607V HY1607V

SD GSDG SSDDGG TO-220FB-3L TO-220FB-3M TO-263-2L TO-3PM-3L SDG SSD

 8.2. Size:947K  hymexa
 hy1607p.pdf

HY1607V HY1607V

HY1607PN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/70ARDS(ON)= 6.5m (typ.) @ VGS=10V100% avalanche testedGD Reliable and Rugged S Lead Free and Green Devices Available D(RoHS Compliant)ApplicationsGSwitching application Power Management for Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeP : T

 9.1. Size:627K  hymexa
 hy1606p hy1606b.pdf

HY1607V HY1607V

HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

 9.2. Size:627K  hymexa
 hy1606p-b.pdf

HY1607V HY1607V

HY1606P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66ARDS(ON)= 10.4 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices AvailableDG(RoHS Compliant)SDGTO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and

 9.3. Size:3657K  hymexa
 hy1603d hy1603u hy1603s.pdf

HY1607V HY1607V

HY1603D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.0m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge SSD Excellent CdV/dt effect decline DGG Advanced high cell density Trench technology SDG Halogen - Free Device Available TO-251-3L TO-251-3LTO-252-2LApplicationsD High Frequency Synchronous Buck

 9.4. Size:957K  hymexa
 hy1606d hy1606u hy1606v.pdf

HY1607V HY1607V

HY1606D/U/VN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/66A,RDS(ON)=10.4 m(typ.) @ VGS=10V Avalanche Rated Reliable and RuggedSDSS Lead Free and Green Devices AvailableGDDGG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplications Power Management for Inverter Systems.N-Channel MOSFETOrdering and Marki

 9.5. Size:4782K  hymexa
 hy1603p hy1603b.pdf

HY1607V HY1607V

HY1603P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/62A,RDS(ON)= 4.8m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline SD Advanced high cell density Trench technology G Halogen - Free Device Available SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD High Frequency Synchronous

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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