HY1710PM Datasheet and Replacement
Type Designator: HY1710PM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 273 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO3P
HY1710PM substitution
HY1710PM Datasheet (PDF)
hy1710p hy1710m hy1710b hy1710mf hy1710ps hy1710pm.pdf

HY1710P/M/B/MF/PS/PMN-Channel Enhancement Mode MOSFETFeature Pin Description 100V/70ARDS(ON)= 15m(typ.)@VGS = 10VSDG 100% Avalanche Tested SDG Reliable and RuggedSDG Lead- Free Devices AvailableTO-263-2LTO-220FB-3LTO-220FB-3S(RoHS Compliant)Applications SD Switching applicationGSSD Power management for inverter systems DGGTO-220M
Datasheet: HY1607MF , HY1607PS , HY1607PM , HY1710P , HY1710M , HY1710B , HY1710MF , HY1710PS , 12N60 , HY1720P , HY1720B , HY1803C2 , HY1804D , HY1804V , HY1804P , HY1804B , HY1904C2 .
History: BSO220N03MSG | RJK4034DJE
Keywords - HY1710PM MOSFET datasheet
HY1710PM cross reference
HY1710PM equivalent finder
HY1710PM lookup
HY1710PM substitution
HY1710PM replacement
History: BSO220N03MSG | RJK4034DJE



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