HY1920W Datasheet and Replacement
Type Designator: HY1920W
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 130 nC
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO247
HY1920W substitution
HY1920W Datasheet (PDF)
Datasheet: HY1908B , HY1908MF , HY1908PS , HY1908PM , HY1915P , HY1915B , HY1920P , HY1920B , IRFZ24N , HY19P03D , HY19P03U , HY19P03V , HY19P03P , HY19P03B , HY3003D , HY3003U , HY3003V .
Keywords - HY1920W MOSFET datasheet
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