HY1920W Specs and Replacement
Type Designator: HY1920W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 392 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO247
HY1920W substitution
- MOSFET ⓘ Cross-Reference Search
HY1920W datasheet
Detailed specifications: HY1908B , HY1908MF , HY1908PS , HY1908PM , HY1915P , HY1915B , HY1920P , HY1920B , TK10A60D , HY19P03D , HY19P03U , HY19P03V , HY19P03P , HY19P03B , HY3003D , HY3003U , HY3003V .
Keywords - HY1920W MOSFET specs
HY1920W cross reference
HY1920W equivalent finder
HY1920W pdf lookup
HY1920W substitution
HY1920W replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
LIST
Last Update
MOSFET: AOTF20N40L | AOTF11N60L | AOT11N60L | AONS21303C | AOI280A60 | AOB66914L | AO3485C | AOI780A70 | AOB42S60L | AOTF950A70L
Popular searches
2n4124 | mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344
