All MOSFET. HY3010P Datasheet

 

HY3010P Datasheet and Replacement


   Type Designator: HY3010P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220
 

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HY3010P Datasheet (PDF)

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HY3010P

HY3010P/BN-Channel Enhancement Mode MOSFETFeature Pin Description100V/100ARDS(ON)=10m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage Code

Datasheet: HY3003U , HY3003V , HY3008P , HY3008M , HY3008B , HY3008MF , HY3008PL , HY3008PM , NCEP15T14 , HY3010B , HY3203C2 , HY3208AP , HY3208AM , HY3208AB , HY3208APS , HY3208APM , HY3215P .

History: SVG104R0NS

Keywords - HY3010P MOSFET datasheet

 HY3010P cross reference
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