HY3010P MOSFET. Datasheet pdf. Equivalent
Type Designator: HY3010P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 76 nC
Rise Time (tr): 50 nS
Drain-Source Capacitance (Cd): 850 pF
Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
Package: TO220
HY3010P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3010P Datasheet (PDF)
..1. Size:406K hymexa
hy3010p hy3010b.pdf
hy3010p hy3010b.pdf
HY3010P/BN-Channel Enhancement Mode MOSFETFeature Pin Description100V/100ARDS(ON)=10m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPackage Code
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
