HY3704B Datasheet and Replacement
Type Designator: HY3704B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 176 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1028 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
Package: TO263
HY3704B substitution
HY3704B Datasheet (PDF)
hy3704p hy3704b.pdf
HY3704P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/176ARDS(ON)= 3.0 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged SGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2LTO-220FB-3L TO-263-2LApplications Switching application Power Management for DC/DCN-Channel MOSFETOrdering a
hy3708p hy3708m hy3708b hy3708ps hy3708pm.pdf
HY3708P/M/B/PS/PMN-Channel Enhancement Mode MOSFETatures Pin DescriptionFe 80V/170ARDS(ON)= 3.8 m(typ.) @ VGS=10VSDGS 100% avalanche testedDGSD Reliable and RuggedGTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter S
Datasheet: HY3312PS , HY3312PM , HY3403P , HY3403B , HY3503C2 , HY3606P , HY3606B , HY3704P , AO4407A , HY3708P , HY3708M , HY3708B , HY3708PS , HY3708PM , HY3712P , HY3712M , HY3712B .
Keywords - HY3704B MOSFET datasheet
HY3704B cross reference
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HY3704B replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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