All MOSFET. HY3712P Datasheet

 

HY3712P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HY3712P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 339 W
   Maximum Drain-Source Voltage |Vds|: 125 V
   Maximum Gate-Source Voltage |Vgs|: 25 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 170 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 189 nC
   Rise Time (tr): 46 nS
   Drain-Source Capacitance (Cd): 980 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0075 Ohm
   Package: TO220

 HY3712P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HY3712P Datasheet (PDF)

 ..1. Size:1051K  hymexa
 hy3712p hy3712m hy3712b hy3712ps hy3712pm.pdf

HY3712P HY3712P

HY3712P/M/B/PS/PMN-Channel Enhancement Mode MOSFETFeaturesPin Description 125V/170ARDS(ON)= 6.3 m(typ.) @ VGS=10VSDG 100% avalanche tested SDGS Reliable and Rugged DGTO-220FB-3L TO-220FB-3M TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSSDDGGTO-220MF-3L TO-3PS-3L TO-3PM-3SpplicationsASwitchi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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