SSS4N80A
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSS4N80A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 40
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
TO220F
SSS4N80A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSS4N80A
Datasheet (PDF)
..1. Size:500K samsung
sss4n80a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
0.1. Size:125K samsung
sss4n80as.pdf
SSS4N80ASAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
9.1. Size:888K fairchild semi
ssp4n60b sss4n60b.pdf
SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi
9.2. Size:496K samsung
sss4n90a.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
9.4. Size:501K samsung
sss4n60as.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
9.5. Size:852K samsung
sss4n90as.pdf
Advanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
9.6. Size:1214K shenzhen
sss4n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60Technology co.,Ltd4 Amps 600Volts4 Amps 600Volts4 Amps 600Volts4 Amps600VoltsN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFETN-CHANNEL MOSFET DESCRIPTIONThe SSS4N60 is a high voltage MOSFET and is designed to have better characteristics,such as fast switching time, low gate charge, low on-state resistance
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