SSS4N80A Specs and Replacement
Type Designator: SSS4N80A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220F
SSS4N80A substitution
- MOSFET ⓘ Cross-Reference Search
SSS4N80A datasheet
sss4n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 3.400 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
sss4n80as.pdf
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒
ssp4n60b sss4n60b.pdf
SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒
sss4n90a.pdf
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.181 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒
Detailed specifications: SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , IRFB4115 , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A .
History: 2SK1628
Keywords - SSS4N80A MOSFET specs
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