HY4306P MOSFET. Datasheet pdf. Equivalent
Type Designator: HY4306P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 258 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 230 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 171 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 1093 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
HY4306P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY4306P Datasheet (PDF)
hy4306p hy4306b.pdf
HY4306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and M
hy4306w hy4306a.pdf
HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.SOrdering and Marking Infor
hy4306b6.pdf
HY4306B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 60V/290ARDS(ON)= 1.8m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available Pin 7(RoHS Compliant) Pin1 TO-263-6L Pin4 Pin1 Applications Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFETOrdering and Marking Info
hy4306w hy4306a.pdf
HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar
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