HY4504A Datasheet and Replacement
Type Designator: HY4504A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 336 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 1800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO3P
HY4504A substitution
HY4504A Datasheet (PDF)
hy4504w hy4504a.pdf

HY4504W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/250A2.0 m (typ.) @ VGS=10VRDS(ON)= Avalanche Rated Reliable and Rugged Halogen Free and Green DevicesAvailable(RoHS Compliant)SSSDDDGG Applications Power Management for Inverter Systems. Ordering and Marking InformationPackage C
hy4504b6.pdf

HY4504B6 N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/322ARDS(ON)= 1.5m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Halogen Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Switch application Brushless Motor Drive Pin1 DC-DC Electric Power Steering Pin2,3,5,6,7
hy4504p hy4504b.pdf

HY4504P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/250ARDS(ON)= 2.3 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices Available GD(RoHS Compliant)SGDTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking InformationPa
Datasheet: HY4008PM , HY4306B6 , HY4306P , HY4306B , HY4504B6 , HY4504P , HY4504B , HY4504W , AON7408 , HY4903P , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W .
History: NCE65N230 | JCS2N70VH | BUK9M35-80E | IRF5Y1310CM | IRF5NJ6215 | IXTP70N075T2 | IRF3711ZPBF
Keywords - HY4504A MOSFET datasheet
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History: NCE65N230 | JCS2N70VH | BUK9M35-80E | IRF5Y1310CM | IRF5NJ6215 | IXTP70N075T2 | IRF3711ZPBF



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