HY4903P Specs and Replacement
Type Designator: HY4903P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 290 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1236 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO220
HY4903P substitution
- MOSFET ⓘ Cross-Reference Search
HY4903P datasheet
hy4903p hy4903b.pdf
HY4903P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/290A RDS(ON)=1.6m (typ.) @VGS = 10V 100% avalanche tested Excellent CdV/dt effect decline S GD Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information Package Code P B P TO-220FB-3L... See More ⇒
hy4903b6.pdf
HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/314A RDS(ON)= 1.3m (typ.)@VGS = 10V RDS(ON)= 1.7m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive ... See More ⇒
Detailed specifications: HY4306B6 , HY4306P , HY4306B , HY4504B6 , HY4504P , HY4504B , HY4504W , HY4504A , IRFP250N , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A .
History: STB100NF04
Keywords - HY4903P MOSFET specs
HY4903P cross reference
HY4903P equivalent finder
HY4903P pdf lookup
HY4903P substitution
HY4903P replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: STB100NF04
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