HY4903P Datasheet and Replacement
Type Designator: HY4903P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 290 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 1236 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO220
HY4903P substitution
HY4903P Datasheet (PDF)
hy4903p hy4903b.pdf
HY4903P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/290ARDS(ON)=1.6m(typ.) @VGS = 10V 100% avalanche tested Excellent CdV/dt effect declineSGD Device Available GDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking InformationPackage CodeP BP : TO-220FB-3L
hy4903b6.pdf
HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/314A RDS(ON)= 1.3m(typ.)@VGS = 10V RDS(ON)= 1.7m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive
Datasheet: HY4306B6 , HY4306P , HY4306B , HY4504B6 , HY4504P , HY4504B , HY4504W , HY4504A , STP75NF75 , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W , HY5204A , HY5208W , HY5208A .
History: RJK5012DPE
Keywords - HY4903P MOSFET datasheet
HY4903P cross reference
HY4903P equivalent finder
HY4903P lookup
HY4903P substitution
HY4903P replacement
History: RJK5012DPE
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