HY4903B Datasheet. Specs and Replacement

Type Designator: HY4903B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 290 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 1236 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO263

HY4903B substitution

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HY4903B datasheet

 ..1. Size:696K  hymexa
 hy4903p hy4903b.pdf pdf_icon

HY4903B

HY4903P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/290A RDS(ON)=1.6m (typ.) @VGS = 10V 100% avalanche tested Excellent CdV/dt effect decline S GD Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Information Package Code P B P TO-220FB-3L... See More ⇒

 0.1. Size:664K  hymexa
 hy4903b6.pdf pdf_icon

HY4903B

HY4903B6 N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/314A RDS(ON)= 1.3m (typ.)@VGS = 10V RDS(ON)= 1.7m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive ... See More ⇒

Detailed specifications: HY4306P, HY4306B, HY4504B6, HY4504P, HY4504B, HY4504W, HY4504A, HY4903P, IRF630, HY4903B6, HY5110W, HY5110A, HY5204W, HY5204A, HY5208W, HY5208A, HY5608W

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.