All MOSFET. HYG020N04NA1P Datasheet

 

HYG020N04NA1P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG020N04NA1P
   Marking Code: G020N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 220 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 134.2 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO220

 HYG020N04NA1P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG020N04NA1P Datasheet (PDF)

 ..1. Size:1421K  hymexa
 hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf

HYG020N04NA1P HYG020N04NA1P

HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET

 9.1. Size:793K  1
 hyg023n03lr1c2.pdf

HYG020N04NA1P HYG020N04NA1P

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 9.2. Size:1497K  1
 hyg025n06ls1c2.pdf

HYG020N04NA1P HYG020N04NA1P

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

 9.3. Size:1254K  1
 hyg025n04na1c2.pdf

HYG020N04NA1P HYG020N04NA1P

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac

 9.4. Size:1225K  hymexa
 hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf

HYG020N04NA1P HYG020N04NA1P

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/110ARDS(ON)= 2.1m(typ.)@VGS = 10VRDS(ON)= 2.7m(typ.)@VGS = 4.5VSD SG D 100% Avalanche TestedG Reliable and Rugged SD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana

 9.5. Size:1447K  hymexa
 hyg025n06ls1p.pdf

HYG020N04NA1P HYG020N04NA1P

HYG025N06LS1PSingle N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/160ARDS(ON)= 2.5 m (typ.) @ VGS = 10VRDS(ON)= 3.7 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)TO-220FB-3LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

 9.6. Size:1497K  hymexa
 hyg025n06ls1c2.pdf

HYG020N04NA1P HYG020N04NA1P

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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