All MOSFET. HYG035N02KA1C2 Datasheet

 

HYG035N02KA1C2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG035N02KA1C2
   Marking Code: G035N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 57.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 95 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 47.5 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: PDFN8L

 HYG035N02KA1C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG035N02KA1C2 Datasheet (PDF)

 ..1. Size:1055K  1
 hyg035n02ka1c2.pdf

HYG035N02KA1C2 HYG035N02KA1C2

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

 ..2. Size:1055K  hymexa
 hyg035n02ka1c2.pdf

HYG035N02KA1C2 HYG035N02KA1C2

HYG035N02KA1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 20V/95A D D D D D D D D RDS(ON)= 2.6 m (typ.) @VGS = 4.5V RDS(ON)= 3.1 m (typ.) @VGS = 2.5V RDS(ON)= 4.4 m (typ.) @VGS = 1.8V 100% Avalanche Tested Reliable and Rugged G S S S S S S G Halogen- Free Devices Available Pin1 PDFN8L(5x6) Applications S

 6.1. Size:1335K  1
 hyg035n06ls1c2.pdf

HYG035N02KA1C2 HYG035N02KA1C2

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

 6.2. Size:1335K  hymexa
 hyg035n06ls1c2.pdf

HYG035N02KA1C2 HYG035N02KA1C2

HYG035N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 65V/90AD D D DD D D DRDS(ON)= 2.9m(typ.) @VGS = 10VRDS(ON)= 4.7m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect board Motor drive for electric

 9.1. Size:641K  hymexa
 hyg032n03lr1c1.pdf

HYG035N02KA1C2 HYG035N02KA1C2

HYG032N03LR1C1 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 30V/55A RDS(ON)= 3.3m(typ.) @VGS = 10V RDS(ON)= 4.3 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged S S S G G S S S Halogen Free and Green Devices Available Pin1 (RoHS Compliant) DFN3*3-8L Applications Power Management for DC/DC

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NTMS4176PR2G

 

 
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