HYG060P04LQ1V MOSFET. Datasheet pdf. Equivalent

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

HYG060N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/105A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET

HYG060N08NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/80A RDS(ON)=5.7 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D SG D GLead-Free and Green Devices Available SD (RoHS Compliant) GTO-252-2L TO-251-3L TO-251-3S Applications Switching application Power management for inverter systems N-Ch

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET

HYG068N08NR1PN-Channel Enhancement Mode MOSFETFeature Pin Description 80V/160ARDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices AvailableSD(RoHS Compliant)GTO-220FB-3L Applications Power management in Inverter System Electric vehicle controllers Lithium battery protection board Switching Applicat

HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste

HYG067N07NQ1P/B/PSN-Channel Enhancement Mode MOSFETFeature Pin Description 68V/80ARDS(ON)= 6.5m(typ.)@VGS = 10V 100% Avalanche TestedSD Reliable and RuggedG Lead-Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-220FB-3L TO-3PS-3L TO-263-2LApplications Portable equipment and battery powered systems DC-DC Converters Switch

HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat