HYG064N08NA1B PDF and Equivalents Search

 

HYG064N08NA1B Specs and Replacement

Type Designator: HYG064N08NA1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 460 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO263

HYG064N08NA1B substitution

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HYG064N08NA1B datasheet

 ..1. Size:1248K  hymexa
hyg064n08na1p hyg064n08na1b.pdf pdf_icon

HYG064N08NA1B

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)= 6.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged S D Lead-Free and Green Devices Available G S (RoHS Compliant) D G TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Ma... See More ⇒

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdf pdf_icon

HYG064N08NA1B

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒

 9.2. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf pdf_icon

HYG064N08NA1B

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching... See More ⇒

 9.3. Size:709K  hymexa
hyg065n07ns1p hyg065n07ns1b.pdf pdf_icon

HYG064N08NA1B

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Channel MOSFET ... See More ⇒

Detailed specifications: HYG060N08NS1U , HYG060N08NS1V , HYG060N08NS1P , HYG060N08NS1B , HYG060P04LQ1D , HYG060P04LQ1U , HYG060P04LQ1V , HYG064N08NA1P , 2SK3568 , HYG065N07NS1D , HYG065N07NS1U , HYG065N07NS1V , HYG065N07NS1P , HYG065N07NS1B , HYG065N15NS1B6 , HYG065N15NS1P , HYG065N15NS1B .

History: 2N7002ESGP | ME2306N-G

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