All MOSFET. HYG065N07NS1P Datasheet

 

HYG065N07NS1P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG065N07NS1P
   Marking Code: G065N07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 70 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 910 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220

 HYG065N07NS1P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG065N07NS1P Datasheet (PDF)

 ..1. Size:709K  hymexa
 hyg065n07ns1p hyg065n07ns1b.pdf

HYG065N07NS1P HYG065N07NS1P

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET

 2.1. Size:744K  hymexa
 hyg065n07ns1d hyg065n07ns1u hyg065n07ns1v.pdf

HYG065N07NS1P HYG065N07NS1P

HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste

 7.1. Size:1408K  hymexa
 hyg065n15ns1p hyg065n15ns1b.pdf

HYG065N07NS1P HYG065N07NS1P

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 7.2. Size:1465K  hymexa
 hyg065n15ns1b6.pdf

HYG065N07NS1P HYG065N07NS1P

HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HY3712M | KP901B | KP750A | UTT25P10L-TF3-T | IRFBG30PBF | WMK53N60C4 | HM2319A

 

 
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