All MOSFET. HYG110P04LQ2U Datasheet

 

HYG110P04LQ2U Datasheet and Replacement


   Type Designator: HYG110P04LQ2U
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 57.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 253 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO251
 

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HYG110P04LQ2U Datasheet (PDF)

 ..1. Size:655K  hymexa
 hyg110p04lq2d hyg110p04lq2u hyg110p04lq2v.pdf pdf_icon

HYG110P04LQ2U

HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50ARDS(ON)= 9.4m(typ.) @VGS = -10V RDS(ON)= 13 m(typ.) @VGS = -4.5V SDSGD 100% avalanche testedGS Reliable and Rugged DG Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in

 2.1. Size:739K  1
 hyg110p04lq2c2.pdf pdf_icon

HYG110P04LQ2U

HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe

Datasheet: HYG065N15NS1B6 , HYG065N15NS1P , HYG065N15NS1B , HYG068N08NR1P , HYG080N10LS1D , HYG082N03LR1C1 , HYG092N10LS1C2 , HYG110P04LQ2D , AO3401 , HYG110P04LQ2V , HYG210P06LQ1D , HYG210P06LQ1U , HYG210P06LQ1V , HYG400P10LR1D , HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D .

History: NCEA75H25 | MCAC40N10YA-TP

Keywords - HYG110P04LQ2U MOSFET datasheet

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