HSU4N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSU4N65
Marking Code: 4N65DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO252
HSU4N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSU4N65 Datasheet (PDF)
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hsd4n65 hsu4n65 hsp4n65 hsf4n65.pdf
HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s
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