All MOSFET. HSF4N65 Datasheet

 

HSF4N65 Datasheet and Replacement


   Type Designator: HSF4N65
   Marking Code: 4N65FF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F
 

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HSF4N65 Datasheet (PDF)

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 hsd4n65 hsu4n65 hsp4n65 hsf4n65.pdf pdf_icon

HSF4N65

HS4N65 650V 4A N-Channel Planar MOSFET FEATURES General Description RDSON3.0 @Vgs=10V, Id=2A HS4N65 is Fortunatus high voltage MOSFET family based on Ultra Low gate Charge(typical 13 nC) advanced planar stripe DMOS technology. This advanced Low Crss (typical 5pF) MOSFET family has optimized on-state resistance, and also Fast switching capability provides s

Datasheet: HYG400P10LR1U , HYG400P10LR1V , HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 , IRF9640 , HSBA0048 , HSBA0139 , HSBA060N10 , HSBA100P03 , HSBA15810C , HSBA20N15S , HSBA3004 , HSBA3014 .

History: SWF8N65DB | IRFB4137PBF

Keywords - HSF4N65 MOSFET datasheet

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