2SK1852
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1852
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 10
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
trⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package: MP10
2SK1852
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1852
Datasheet (PDF)
8.4. Size:82K renesas
2sk1859.pdf
2SK1859 Silicon N Channel MOS FET REJ03G0981-0200 (Previous: ADE-208-1328) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D1. GateG2. Dr
8.5. Size:95K renesas
rej03g0981 2sk1859ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.7. Size:54K inchange semiconductor
2sk1855.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1855 DESCRIPTION Drain Current ID=12A@ TC=25 Drain Source Voltage- : VDSS=500V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage 30 V
Datasheet: 2SK1785
, 2SK1793
, 2SK1794
, 2SK1795
, 2SK1796
, 2SK1824
, 2SK1850
, 2SK1851
, IRFP260N
, 2SK1853
, 2SK1917-MR
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, 2SK195
, 2SK1953
, 2SK1954
, 2SK1958
, 2SK1959
.