SSS6N80A PDF and Equivalents Search

 

SSS6N80A Specs and Replacement

Type Designator: SSS6N80A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: TO220F

SSS6N80A substitution

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SSS6N80A datasheet

 ..1. Size:505K  samsung
 sss6n80a.pdf pdf_icon

SSS6N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 9.1. Size:284K  1
 sss6n55 sss6n60.pdf pdf_icon

SSS6N80A

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 9.2. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

SSS6N80A

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 9.3. Size:501K  samsung
 sss6n70a.pdf pdf_icon

SSS6N80A

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

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Detailed specifications: SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , 2SK3878 , SSS6N90A , SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A .

Keywords - SSS6N80A MOSFET specs

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