All MOSFET. SSS6N80A Datasheet

 

SSS6N80A Datasheet and Replacement


   Type Designator: SSS6N80A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO220F
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SSS6N80A Datasheet (PDF)

 ..1. Size:505K  samsung
 sss6n80a.pdf pdf_icon

SSS6N80A

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

 9.1. Size:284K  1
 sss6n55 sss6n60.pdf pdf_icon

SSS6N80A

 9.2. Size:26K  samsung
 irfs8xx irfs9xxx sss4n60 sss6n60.pdf pdf_icon

SSS6N80A

 9.3. Size:501K  samsung
 sss6n70a.pdf pdf_icon

SSS6N80A

Advanced Power MOSFETFEATURESBVDSS = 700 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

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Datasheet: SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , SPP20N60C3 , SSS6N90A , SSS70N10A , SSS7N60A , SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A .

History: SPD04N60S5 | SM6A12NSFP | FCPF7N60YDTU

Keywords - SSS6N80A MOSFET datasheet

 SSS6N80A cross reference
 SSS6N80A equivalent finder
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