All MOSFET. HSBA6032 Datasheet

 

HSBA6032 Datasheet and Replacement


   Type Designator: HSBA6032
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 41.2 nS
   Cossⓘ - Output Capacitance: 201 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PRPAK5X6
 

 HSBA6032 substitution

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HSBA6032 Datasheet (PDF)

 ..1. Size:702K  1
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HSBA6032

HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 ..2. Size:702K  huashuo
hsba6032.pdf pdf_icon

HSBA6032

HSBA6032 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6032 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 7.1 m converter applications. ID 60 A The HSBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 8.1. Size:752K  1
hsba6074.pdf pdf_icon

HSBA6032

HSBA6074 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6074 is the high cell density SGT N-ch V 60 V DSMOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 1.7 m DS(ON),typconverter applications. I 100 A DThe HSBA6074 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

 8.2. Size:497K  1
hsba6040.pdf pdf_icon

HSBA6032

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

Datasheet: HSBA3094 , HSBA3115 , HSBA4006 , HSBA4016 , HSBA4048 , HSBA4052 , HSBA4094 , HSBA6016 , IRF3710 , HSBA6040 , HSBA6048 , HSBA6066 , HSBA8024A , HSBA8048 , HSBA8066 , HSBB0012 , HSBB02P15 .

History: RU4089R | IRF7324PBF-1

Keywords - HSBA6032 MOSFET datasheet

 HSBA6032 cross reference
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