HSBA8024A MOSFET. Datasheet pdf. Equivalent

   Type Designator: HSBA8024A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 122 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 571 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PRPAK5X6

HSBA8024A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HSBA8024A Datasheet (PDF)

..1. Size:949K huashuo
hsba8024a.pdf

HSBA8024A N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8024A is the high cell density trenched DS 80 V N-ch MOSFETs, which provide excellent RDSON R 6.5 m DS(ON),MAXand gate charge for most of the synchronous rectification applications. I 122 A DThe HSBA8024A meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guarantee

8.1. Size:636K 1
hsba8048.pdf

HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYPgate charge for most of the synchronous rectification applications. I 48 A DThe HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w

8.2. Size:711K 1
hsba8066.pdf

HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad

8.3. Size:636K huashuo
hsba8048.pdf