All MOSFET. HSBB4016 Datasheet

 

HSBB4016 Datasheet and Replacement


   Type Designator: HSBB4016
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PRPAK3X3
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HSBB4016 Datasheet (PDF)

 ..1. Size:616K  1
 hsbb4016.pdf pdf_icon

HSBB4016

HSBB4016 Description Product Summary The HSBB4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.9 m converter applications. ID 40 A The HSBB4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. PRPAK3x3 Pin Co

 ..2. Size:616K  huashuo
 hsbb4016.pdf pdf_icon

HSBB4016

HSBB4016 Description Product Summary The HSBB4016 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 4.9 m converter applications. ID 40 A The HSBB4016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved. PRPAK3x3 Pin Co

 8.1. Size:793K  1
 hsbb4052.pdf pdf_icon

HSBB4016

HSBB4052 N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSBB4052 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 6.9 m converter applications. ID 43 A The HSBB4052 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.2. Size:763K  1
 hsbb4062.pdf pdf_icon

HSBB4016

HSBB4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 33 A Applications Power Management Functions PRPAK3*3 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Ra

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AO4264C | 1N70Z | IRLML2030TR | R6006JND3 | 2N7271H1 | DG4N65-TO251 | PDN2312S

Keywords - HSBB4016 MOSFET datasheet

 HSBB4016 cross reference
 HSBB4016 equivalent finder
 HSBB4016 lookup
 HSBB4016 substitution
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