All MOSFET. HSM0048 Datasheet

 

HSM0048 Datasheet and Replacement


   Type Designator: HSM0048
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 13.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: SOP8
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HSM0048 Datasheet (PDF)

 ..1. Size:2275K  huashuo
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HSM0048

HSM0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description VDS 100 V The HSM0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8 m gate charge for most of the Synchronous ID 13.5 A Rectification for AC/DC Quick Charger. l 100% EAS Guaranteed SOP8 Pin Configuration l Low RDS(ON) l Low Gate Charge l RoHs an

 9.1. Size:2280K  huashuo
hsm0094.pdf pdf_icon

HSM0048

HSM0094 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0094 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 11.5 A 100% EAS Guaranteed Low RDS(ON) Low Gate Charge SOP8 Pin Configuration R

 9.2. Size:2213K  huashuo
hsm0026.pdf pdf_icon

HSM0048

HSM0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 20 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

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History: AOP605 | IRHLUBC7970Z4 | 2SK3312B | CSD18531Q5A | JCS12N65CT | BSC190N12NS3G | FCAB21490L1

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