HSM0048 Datasheet and Replacement
Type Designator: HSM0048
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 605 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: SOP8
HSM0048 substitution
HSM0048 Datasheet (PDF)
hsm0048.pdf

HSM0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description VDS 100 V The HSM0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8 m gate charge for most of the Synchronous ID 13.5 A Rectification for AC/DC Quick Charger. l 100% EAS Guaranteed SOP8 Pin Configuration l Low RDS(ON) l Low Gate Charge l RoHs an
hsm0094.pdf

HSM0094 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0094 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 11.5 A 100% EAS Guaranteed Low RDS(ON) Low Gate Charge SOP8 Pin Configuration R
hsm0026.pdf

HSM0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 20 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil
Datasheet: HSK0008 , HSK4N10 , HSL0004 , HSL0107 , HSL03N20 , HSL6008 , HSL6107 , HSM0026 , 2SK3918 , HSM0094 , HSM0204 , HSM0228 , HSM1562 , HSM1564 , HSM1641 , HSM20N02 , HSM2202 .
History: AONS66917T
Keywords - HSM0048 MOSFET datasheet
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History: AONS66917T



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