HSM0048 Datasheet. Specs and Replacement

Type Designator: HSM0048

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: SOP8

HSM0048 substitution

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HSM0048 datasheet

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HSM0048

HSM0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description VDS 100 V The HSM0048 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8 m gate charge for most of the Synchronous ID 13.5 A Rectification for AC/DC Quick Charger. l 100% EAS Guaranteed SOP8 Pin Configuration l Low RDS(ON) l Low Gate Charge l RoHs an... See More ⇒

 9.1. Size:2280K  huashuo
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HSM0048

HSM0094 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0094 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 11.5 A 100% EAS Guaranteed Low RDS(ON) Low Gate Charge SOP8 Pin Configuration R... See More ⇒

 9.2. Size:2213K  huashuo
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HSM0048

HSM0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 20 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil... See More ⇒

Detailed specifications: HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107, HSM0026, EMB04N03H, HSM0094, HSM0204, HSM0228, HSM1562, HSM1564, HSM1641, HSM20N02, HSM2202

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