All MOSFET. HSM0204 Datasheet

 

HSM0204 Datasheet and Replacement


   Type Designator: HSM0204
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.112 Ohm
   Package: SOP8
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HSM0204 Datasheet (PDF)

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HSM0204

HSM0204 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0204 is the high cell density trenched N- ch MOSFETs, which provides excellent RDSON RDS(ON),max 112 m and efficiency for most of the small power switching and load switch applications. ID 2.5 A The HSM0204 meets the RoHS and Green Product requirement with full function reliab

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HSM0204

HSM0228 Dual N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0228 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 68 m gate charge for most of the synchronous buck converter applications. ID 4 A The HSM0228 meet the RoHS and Green Product requirement with full function reliability approved.

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MT28N20A | AP30H80Q | R6006JND3 | 1N70Z | NVMFD5C478N | NCE60P65K | MEE3710-G

Keywords - HSM0204 MOSFET datasheet

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