HSM3202 Datasheet and Replacement
Type Designator: HSM3202
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.8 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
HSM3202 substitution
HSM3202 Datasheet (PDF)
hsm3202.pdf

HSM3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3202 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7.8 A The HSM3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm3206.pdf

HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
hsm3214.pdf

HSM3214 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3214 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM3214 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function rel
Datasheet: HSM24P03 , HSM2627 , HSM2903 , HSM3002 , HSM3006 , HSM3056 , HSM3107 , HSM3115 , IRF640 , HSM3206 , HSM3214 , HSM3303 , HSM3305 , HSM3903 , HSM4002 , HSM4004 , HSM4006 .
Keywords - HSM3202 MOSFET datasheet
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History: BUZ32H | 2SK1821



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