SSW1N50A PDF and Equivalents Search

 

SSW1N50A Specs and Replacement

Type Designator: SSW1N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm

Package: TO263

SSW1N50A substitution

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SSW1N50A datasheet

 ..1. Size:293K  1
 ssi1n50a ssw1n50a.pdf pdf_icon

SSW1N50A

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 ..2. Size:503K  samsung
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SSW1N50A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V 2 Lower RDS(ON) 4.046 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch... See More ⇒

 9.1. Size:220K  1
 ssi1n60a ssw1n60a.pdf pdf_icon

SSW1N50A

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 9.2. Size:503K  samsung
 ssw1n60a.pdf pdf_icon

SSW1N50A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) 9.390 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte... See More ⇒

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Detailed specifications: SSS7N80A , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , SSU2N60A , SSU3055A , SSU3055LA , K4145 , SSW1N60A , SSW2N60A , SSW2N80A , SSW2N90A , SSW3N80A , SSW3N90A , SSW4N60A , SSW4N80A .

History: CHM05N65PAGP

Keywords - SSW1N50A MOSFET specs

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