All MOSFET. SSW1N50A Datasheet

 

SSW1N50A Datasheet and Replacement


   Type Designator: SSW1N50A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
   Package: TO263
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SSW1N50A Datasheet (PDF)

 ..1. Size:293K  1
 ssi1n50a ssw1n50a.pdf pdf_icon

SSW1N50A

 ..2. Size:503K  samsung
 ssw1n50a.pdf pdf_icon

SSW1N50A

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V2 Lower RDS(ON) : 4.046 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.1. Size:220K  1
 ssi1n60a ssw1n60a.pdf pdf_icon

SSW1N50A

 9.2. Size:503K  samsung
 ssw1n60a.pdf pdf_icon

SSW1N50A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Low RDS(ON) : 9.390 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte

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Keywords - SSW1N50A MOSFET datasheet

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