HSM4113 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM4113
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 9 nC
trⓘ - Rise Time: 12.8 nS
Cossⓘ - Output Capacitance: 108 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOP8
HSM4113 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM4113 Datasheet (PDF)
hsm4113.pdf
HSM4113 P-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4113 is the high cell density trenched P-VDS -40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 40 m converter applications. ID -7.5 A The HSM4113 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
hsm4115.pdf
HSM4115 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 13 m gate charge for most of the synchronous buck converter applications. ID -8.7 A The HSM4115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia
hsm4103.pdf
HSM4103 P-Ch 40V Fast Switching MOSFETs Description Product Summary VDS -40 V The HSM4103 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 32 m gate charge for most of the synchronous buck converter applications. ID -8.6 A The HSM4103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .
