All MOSFET. HSM4204 Datasheet

 

HSM4204 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSM4204
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.7 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SOP8

 HSM4204 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSM4204 Datasheet (PDF)

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 hsm4204.pdf

HSM4204 HSM4204

HSM4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4204 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 12 m converter applications. The HSM4204 meet the RoHS and Green Product ID 7.5 A requirement, 100% EAS guaranteed with full function rel

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